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BYV34-600
Dual rectifier diode ultrafast
Rev. 01 -- 4 October 2007 Product data sheet
1. Product profile
1.1 General description
Ultrafast, dual common cathode, epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features
I Fast switching I Soft recovery characteristic I Low switching loss I Low thermal resistance I Low forward voltage drop I High thermal cycling performance
1.3 Applications
I Output rectifiers in high frequency switched-mode power supplies I Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
1.4 Quick reference data
I VRRM 600 V I VF 1.16 V I IO(AV) 20 A I trr 60 ns
2. Pinning information
Table 1. Pin 1 2 3 mb Pinning Description anode 1 cathode anode 2 mounting base; cathode
mb
1 2
sym084
Simplified outline
Symbol
3
123
SOT78 (3-lead TO-220AB)
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
3. Ordering information
Table 2. Ordering information Package Name BYV34-600 TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
4. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VRRM VRWM VR IO(AV) IFRM IFSM Parameter repetitive peak reverse voltage crest working reverse voltage reverse voltage average output current repetitive peak forward current non-repetitive peak forward current square waveform; = 1.0; Tmb 138 C square waveform; = 0.5; Tmb 107 C; both diodes conducting t = 25 s; square waveform; = 0.5; Tmb 107 C; per diode t = 10 ms; sinusoidal waveform; per diode t = 8.3 ms; sinusoidal waveform; per diode Tstg Tj storage temperature junction temperature Conditions Min -40 Max 600 600 600 20 20 120 132 +150 150 Unit V V V A A A A C C
5. Thermal characteristics
Table 4. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions with heatsink compound; per diode; see Figure 1 with heatsink compound; both diodes conducting Rth(j-a) thermal resistance from junction to ambient in free air Min Typ 60 Max 2.4 1.6 Unit K/W K/W K/W
BYV34-600_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 4 October 2007
2 of 9
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
10 Zth(j-mb) (K/W) 1
001aag912
10-1
P = tp T
10-2
tp T t
10-3 10-6
10-5
10-4
10-3
10-2
10-1
1 tp (s)
10
Fig 1. Transient thermal impedance from junction to mounting base per diode as a function of pulse width
6. Characteristics
Table 5. Characteristics Tj = 25 C unless otherwise specified. Symbol VF IR Parameter forward voltage reverse current Conditions IF = 10 A; Tj = 150 C; see Figure 2 IF = 20 A; see Figure 2 VR = 600 V VR = 600 V; Tj = 100 C Dynamic characteristics Qr trr IRM recovered charge reverse recovery time peak reverse recovery current forward recovery voltage IF = 2 A to VR 30 V; dIF/dt = 20 A/s; see Figure 3 IF = 1 A to VR 30 V; dIF/dt = 100 A/s; see Figure 3 IF = 10 A to VR 30 V; dIF/dt = 50 A/s; Tj = 100 C; see Figure 3 IF = 10 A; dIF/dt = 10 A/s; see Figure 4 40 50 3 70 60 5 nC ns A Min Typ 0.92 1.07 10 0.2 Max 1.16 1.48 50 0.6 Unit V V A mA Static characteristics
VFR
-
3.2
-
V
BYV34-600_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 4 October 2007
3 of 9
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
30 IF (A) 25
003aab485
20
15
10
(1)
(2)
(3)
5
0 0 0.4 0.8 1.2 VF (V) 1.6
(1) Tj = 150 C; typical values (2) Tj = 150 C; maximum values (3) Tj = 25 C; maximum values
Fig 2. Forward current as a function of forward voltage
IF IF dlF dt
trr time time 10 % Qr 100 % VF IR IRM
001aab911
VF
VFR
time
001aab912
Fig 3. Reverse recovery definitions
Fig 4. Forward recovery definitions
BYV34-600_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 4 October 2007
4 of 9
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
18 Ptot (W) 15 0.5 12 0.2 9 0.1 6
003aab483
=1
12 Ptot (W) 10 2.2 8 4.0 6 2.8
003aab484
a = 1.57 1.9
4
3
2
0 0 5 10 IF(AV) (A) 15
0 0 3 6 IF(AV) (A) 9
IF(AV) = IF(RMS) x
a = form factor = IF(RMS) / IF(AV)
Fig 5. Forward power dissipation as a function of average forward current; square waveform; maximum values
Fig 6. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values
BYV34-600_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 4 October 2007
5 of 9
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1
L2 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1 1.45 1.00 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1 3.30 2.79 L2 max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2
OUTLINE VERSION SOT78
REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46
EUROPEAN PROJECTION
ISSUE DATE 05-03-22 05-10-25
Fig 7. Package outline SOT78 (3-lead TO-220AB)
BYV34-600_1 (c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 4 October 2007
6 of 9
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
8. Revision history
Table 6. Revision history Release date 20071004 Data sheet status Product data sheet Change notice Supersedes Document ID BYV34-600_1
BYV34-600_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 4 October 2007
7 of 9
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
9.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
10. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BYV34-600_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 4 October 2007
8 of 9
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data. . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Legal information. . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information. . . . . . . . . . . . . . . . . . . . . . Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 1 2 2 2 3 6 7 8 8 8 8 8 8 9
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 October 2007 Document identifier: BYV34-600_1

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